IS62WV51216EBLL-45BLI-TR
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 45ns 48-Pin VFBGA T/R
The IS62WV51216EBLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS62WV51216EBLL is a packaged in the JEDEC standard 48-pin mini BGA (6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin TSOP (TYPE l).
- High-speed access time: 45ns, 55ns
- CMOS low power operation
- 36 mW (typical) operating
- TTL compatible interface levels
- Single power supply – 2.2V--3.6V VDD
- Data control for upper and lower bytes
- Automotive temperature (-40°C to +125°C)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 8 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 15 mA | ||
| 45 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48VFBGA | ||
| 48 | ||
| 6 x 8 x 0.7(Max) | ||
| No | ||
| Industrial | ||
| VFBGA | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: