IS62WV51216BLL-55BLI
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin Mini-BGA
The ISSI IS62WV51216BLL is a high speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS62WV51216BLL is a packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm) and 44-Pin TSOP (TYPE II).
- High-speed access time: 45ns, 55ns
- CMOS low power operation
- 36 mW (typical) operating
- 12 µW (typical) CMOS standby
- TTL compatible interface levels
- Single power supply
- 2.5V--3.6V VDD
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- Lead-free available
Technical Attributes
Find Similar Parts
Description | Value | |
---|---|---|
19 Bit | ||
8 Mbit | ||
Tin-Silver-Copper | ||
260 | ||
5 mA | ||
55 ns | ||
8 Mbit | ||
Surface Mount | ||
MSL 3 - 168 hours | ||
48 | ||
16 Bit | ||
16 Bit | ||
1 | ||
512 kWords | ||
-40 to 85 °C | ||
85 °C | ||
-40 °C | ||
48Mini-BGA | ||
48 | ||
8.7 x 7.2 x 0.6 mm | ||
No | ||
Industrial | ||
Mini-BGA | ||
3.6 V | ||
2.5 V | ||
3.3 V | ||
Asynchronous | ||
3.3000 V |
ECCN / UNSPSC / COO
Description | Value |
---|---|
Country of Origin: | RECOVERY FEE |
ECCN: | 3A991.B.2.A |
HTSN: | 8542320041 |
Schedule B: | 8542320040 |