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IS62WV2568EBLL-45BLI-TR

SRAM Chip Async Single 2.8V/3.3V 2M-Bit 256K x 8 45ns 36-Pin Mini-BGA T/R

Manufacturer:ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS62WV2568EBLL-45BLI-TR
Secondary Manufacturer Part#: IS62WV2568EBLL-45BLI-TR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IS62WV2568EBLL are high speed, low power, 2M bit SRAMs organized as 256K words by 8 bits. It is fabricated high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) , the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV2568DBLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), sTSOP (TYPE I), and 36-pin mini BGA.

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 18 mA (max) at 85°C
    • CMOS Standby Current: 5.4uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply2.2V-3.6V Vdd
  • Three state outputs
  • Industrial and Automotive temperature support
  • Lead-free available

Technical Attributes

Find Similar Parts

Description Value
18 Bit
2 Mbit
Tin-Silver-Copper
260
18 mA
45 ns
2 Mbit
Surface Mount
MSL 3 - 168 hours
36
8 Bit
8 Bit
1
256 kWords
-40 to 85 °C
85 °C
-40 °C
36Mini-BGA
36
6 x 8 x 0.9
No
Industrial
Mini-BGA
2.8, 3.3 V
2.8, 3.3 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.A
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 84 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$2.16737
5000+
$2.15631
10000+
$2.14525
20000+
$2.13419
40000+
$2.12314