IS62WV2568EBLL-45BLI-TR
SRAM Chip Async Single 2.8V/3.3V 2M-Bit 256K x 8 45ns 36-Pin Mini-BGA T/R
The IS62WV2568EBLL are high speed, low power, 2M bit SRAMs organized as 256K words by 8 bits. It is fabricated high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) , the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV2568DBLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), sTSOP (TYPE I), and 36-pin mini BGA.
- High-speed access time: 45ns, 55ns
- CMOS low power operation
- Operating Current: 18 mA (max) at 85°C
- CMOS Standby Current: 5.4uA (typ) at 25°C
- TTL compatible interface levels
- Single power supply2.2V-3.6V Vdd
- Three state outputs
- Industrial and Automotive temperature support
- Lead-free available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 2 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 18 mA | ||
| 45 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 36 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 36Mini-BGA | ||
| 36 | ||
| 6 x 8 x 0.9 | ||
| No | ||
| Industrial | ||
| Mini-BGA | ||
| 2.8, 3.3 V | ||
| 2.8, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |