IS62WV20488EBLL-45BLI-TR
SRAM Chip Async Single 3.3V 16M-Bit 2M x 8 45ns 48-Pin TFBGA T/R
The IS62WV20488EBLL are high-speed, 16M bit static RAMs organized as 2M words by 8 bits. It is fabricated high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1\ is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE\) controls both writing and reading of the memory.
- High-speed access time: 45ns, 55ns
- CMOS low power operation
- 30 mW (typical) operating
- 12 µW (typical) CMOS standby
- TTL compatible interface levels
- Single power supply: 2.2V-3.6V Vdd
- Fully static operation: no clock or refreshrequired
- Industrial (-40°C to +85°C) and Automotive(-40°C to +125°C) temperature support
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 21 Bit | ||
| 16 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 12 mA | ||
| 45 ns | ||
| 16 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 2 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TFBGA | ||
| 48 | ||
| 6 x 8 x 0.9(Max) | ||
| No | ||
| Industrial | ||
| TFBGA | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: