IS62WV12816EBLL-45BLI
SRAM Chip Async Single 2.8V/3.3V 2M-Bit 128K x 16 45ns 48-Pin Mini-BGA
IS62WV12816EBLL-45BLI is a 128Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 2Mbit static RAM organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using a chip enable and output enable inputs. The active LOW write enables (WE#) to control both the writing and reading of the memory. A data byte allows upper byte (UB#) and lower byte (LB#) access.
- High-speed access time is 45ns
- Operating current is 18mA (max) at 85°C, CMOS standby current is 5.4uA (typ) at 25°C
- TTL compatible interface levels
- Single power supply is 2.2V to 3.6V VDD
- Three state outputs
- Input capacitance is 10pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
- Mini BGA (6mm x 8mm) package
- Industrial temperature rating range from -40°C to +85°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 17 Bit | ||
| 2 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 18 mA | ||
| 45 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 128 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48Mini-BGA | ||
| 48 | ||
| 6 x 8 x 0.9(Max) | ||
| No | ||
| Industrial | ||
| Mini-BGA | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| 2.8, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Lead Time Unavailable