IS62WV12816BLL-55B2LI-TR
SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 55ns 48-Pin TFBGA T/R
The ISSI IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. The IS62WV12816BLL is a packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).
- High-speed access time: 45ns, 55ns, 70ns
- CMOS low power operation
- 36 mW (typical) operating
- 9 µW (typical) CMOS standby
- TTL compatible interface levels
- Single power supply
- 2.5V--3.6V VDD (62WV12816BLL)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- 2CS Option Available
- Lead-free available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 17 Bit | ||
| SDR | ||
| 2 Mbit | ||
| Tin-Silver-Copper | ||
| 260 °C | ||
| 3 mA | ||
| 55 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 128 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TFBGA | ||
| 48 | ||
| 6 x 8 x 0.9 mm | ||
| 0 | ||
| Industrial | ||
| CMOS SRAM | ||
| TFBGA | ||
| 3.3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Lead Time Unavailable