IS61WV5128FBLL-10TLI

IS61WV5128FBLL-10TLI is an asynchronous high-speed, low-power, 4Mbit static RAM organized as 512K words by 8bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power devices. When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs. The active LOW write enable (WE#) controls both writing and reading of the memory.

• High-speed access time is 10ns
• Low active current is 35mA (maximum, 10ns, I-temp)
• Low standby current is 10mA (maximum, I-temp)
• Single power supply is 2.4V to 3.6V VDD
• Three state outputs
• Input capacitance is 6pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
• TSOP (Type II) package
• Industrial temperature rating range from -40°C to +85°C