IS61WV51216EDBLL-10TLI-TR
SRAMs (asynchronous)
The ISSI IS61WV51216BLL is a high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clock or refresh required
- TTL compatible inputs and outputs
- Single power supply
- VDD 2.4V to 3.6V
- speed = 10ns for VDD 2.4V to 3.6V
- speed = 8ns for VDD 3.3V + 5%
- Packages available:
- 48-ball miniBGA (9mm x 11mm)
- 44-pin TSOP (Type II)
- Industrial and Automotive Temperature Support
- Lead-free available
- Data control for upper and lower bytes
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 8 Mbit | ||
| 50 mA | ||
| 10 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| T/R | ||
| 0 | ||
| Industrial | ||
| 3.6 V | ||
| 2.4 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: