IS61WV51216EDBLL-10BLI

The IS61WV51216EDBLL is high-speed, 8M-bit staticRAMs organized as 512K words by 16 bits. It is fabricatedusing ISSI's high-performance CMOS technology.This highly reliable process coupled with innovativecircuit design techniques, yields high-performance andlow power consumption devices. When CE is HIGH (deselected), the device assumesa standby mode at which the power dissipation can bereduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE and OE. The activeLOW Write Enable (WE) controls both writing and readingof the memory. A data byte allows Upper Byte (UB)and Lower Byte (LB) access. The device is packaged in the JEDEC standard 44-pinTSOP Type II and 48-pin Mini BGA (6mm x 8mm).

• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single Power Supply
  • Vdd = 1.65V to 2.2V (IS61WV51216EDALL)
  • Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
• Packages available:
  • 48-ball miniBGA (6mm x 8mm)
  • 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes