IS61WV3216BLL-12TLI-TR

The IS61WV3216BLL isahigh-speed,524,288-bit static RAM organized as 32,768 words by 16 bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE \ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The IS61WV3216BLL is packaged in the JEDEC standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).

• High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V
• CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby
• TTL compatible interface levels
• Fully static operation: no clocks or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Commercial and Industrial Temperature Available
• Lead-free available