IS61WV25616BLL-10TL-TR

The ISSI IS61WV25616BLLis high-speed, 4,194,304-bit static RAMs organized as262,144 words by 16 bits. It is fabricated using ISSI's highperformanceCMOStechnology.Thishighlyreliableprocesscoupled with innovative circuit design techniques, yieldshigh-performance and low power consumption devices.When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The IS61WV25616BLL ispackaged in the JEDEC standard 44-pin 400mil SOJ,44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

• High-speed access time: 8, 10, 20 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
• High-speed access time: 25, 35, 45 ns
• Low Active Power: 35 mW (typical)
• Low Standby Power: 0.6 mW (typical) CMOS standby
• Single power supply
  • Vdd 1.65V to 2.2V (IS61WV25616Axx)
  • Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available