IS61WV20488BLL-10TLI
SRAM Chip Async Single 2.5V/3.3V 16M-Bit 2M x 8 10ns 44-Pin TSOP-II
The IS61WV20488BLL-10TLI is a 2M x 8-bit high-speed low power CMOS Static Random Access Memory (SRAM) fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. It operates from a single power supply and all inputs are TTL-compatible.
- High-speed access time - 10ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE
- CE Power-down
- Fully static operation - no clock or refresh required
Technical Attributes
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| Description | Value | |
|---|---|---|
| 21 Bit | ||
| 16 Mbit | ||
| Matte Tin | ||
| 260 | ||
| 100 mA | ||
| 10 ns | ||
| 16 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 2 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.52 x 10.29 x 1.05 mm | ||
| No | ||
| Industrial | ||
| TSOP-II | ||
| 3.6 V | ||
| 2.4 V | ||
| 3, 3.3 V | ||
| Asynchronous | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: