IS61WV10248BLL-10TLI
SRAM, Asynchronous SRAM, 8 Mbit, 1M x 8bit, TSOP-II, 44 Pins, 2.4 V
The IS61WV10248BLL-10TLI is a 1M x 8-bit high-speed low power CMOS Static Random Access Memory (SRAM) fabricated using ISSI's high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. It operates from a single power supply and all inputs are TTL-compatible.
- High-speed access time - 10ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE
- CE Power-down
- Fully static operation - no clock or refresh required
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 8 Mbit | ||
| Matte Tin | ||
| 260 | ||
| 100 mA | ||
| 10 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 8 Bit | ||
| 8 Bit | ||
| 2 | ||
| 1 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.52 x 10.29 x 1.05 mm | ||
| No | ||
| Industrial | ||
| TSOP-II | ||
| 3.6 V | ||
| 2.4 V | ||
| 3.3, 3.3 V | ||
| Asynchronous | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: