IS61WV102416BLL-10MLI
SRAM, 16 Mbit, 1M x 16bit, 3 V, 48 Pins, TFBGA
IS61WV102416BLL-10MLI is a 16Mbit high speed asynchronous CMOS static RAM organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
- Voltage range from 2.4V to 3.6V
- Speed = 8ns for VDD = 3.3V + 5%, speed = 10ns for Vdd = 2.4V - 3.6V
- Multiple centre power and ground pins for greater noise immunity
- Easy memory expansion with (active low) CE and (active low) OE options
- CE (active low) power-down
- Fully static operation: no clock or refresh required
- TTL compatible inputs and outputs
- Data control for upper and lower bytes
- 48 mini BGA (9mm x 11mm) package
- Industrial temperature range from -40°C to +85°C
Technical Attributes
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| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 16 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 95 mA | ||
| 10 ns | ||
| 16 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 1 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TFBGA | ||
| 48 | ||
| 9 x 11 x 0.9(Max) | ||
| No | ||
| Industrial | ||
| TFBGA | ||
| 3.6 V | ||
| 2.4 V | ||
| 3 V | ||
| Asynchronous | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: