IS61QDP2B451236A-400M3L
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA
The IS61QDP2B451236 are synchronous, high performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-time. The following are registered internally on the rising edge of the K clock: Read/write address, Read enable ,Write enable ,Byte writes for burst addresses 1 and 3 ,Data-in for burst addresses 1 and 3. The following are registered on the rising edge of the K# clock: Byte writes for burst addresses 2 and 4, Data-in for burst addresses 2 and 4. Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered one cycle after the write address. The first data-in burst is clocked one cycle later than the write command signal, and the second burst is timed to the following rising edge of the K# clock. Two full clock cycles are required to complete a write operation. During the burst read operation, the data-outs from the first and third bursts are updated from output registers of the third and fourth rising edges of the K clock (starting 2.0 cycles later after read command). The data-outs from the second and fourth bursts are updated with the third and fourth rising edges of the K# clock where the read command receives at the first rising edge of K. Two full clock cycles are required to complete a read operation. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interfaces.
- 512Kx36 configuration available
- On-chip Delay-Locked Loop (DLL) for wide datavalid window
- Separate independent read and write ports withconcurrent read and write operations
- Synchronous pipeline read with late write operation
- Double Data Rate (DDR) interface for read andwrite input ports
- 2.0 cycle read latency
- Fixed 4-bit burst for read and write operations
- Clock stop support
- Two input clocks (K and K#) for address and controlregistering at rising edges only
- Two echo clocks (CQ and CQ#) that are deliveredsimultaneously with data
- Data Valid Pin (QVLD)
- +1.8V core power supply and 1.5, 1.8V Vddq, usedwith 0.75, 0.9V Vref
- HSTL input and output interface
- Registered addresses, write and read controls, bytewrites, data in, and data outputs
- Full data coherency
- Boundary scan using limited set of JTAG 1149.1functions
- Byte write capability
- Fine ball grid a
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 17 Bit | ||
| Pipelined | ||
| 400 MHz | ||
| DDR | ||
| 18 Mbit | ||
| Tin-Silver-Copper | ||
| 260 °C | ||
| 400 MHz | ||
| 620 mA | ||
| 0.45 ns | ||
| 18 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 165 | ||
| 36 Bit | ||
| 36 Bit | ||
| 1 | ||
| 512 kWords | ||
| 0 to 70 °C | ||
| 70 °C | ||
| 0 °C | ||
| 165FBGA | ||
| 165 | ||
| 17 x 15 x 0.94 mm | ||
| 0 | ||
| Commercial | ||
| Quad DDR SRAM | ||
| FBGA | ||
| 1.8 V | ||
| 1.8000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |