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IS61QDP2B451236A-400M3L

SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA

Manufacturer:ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS61QDP2B451236A-400M3L
Secondary Manufacturer Part#: IS61QDP2B451236A-400M3L
  • Legend Information Icon RoHS 10 Compliant
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The IS61QDP2B451236 are synchronous, high performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-time. The following are registered internally on the rising edge of the K clock: Read/write address, Read enable ,Write enable ,Byte writes for burst addresses 1 and 3 ,Data-in for burst addresses 1 and 3. The following are registered on the rising edge of the K# clock: Byte writes for burst addresses 2 and 4, Data-in for burst addresses 2 and 4. Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered one cycle after the write address. The first data-in burst is clocked one cycle later than the write command signal, and the second burst is timed to the following rising edge of the K# clock. Two full clock cycles are required to complete a write operation. During the burst read operation, the data-outs from the first and third bursts are updated from output registers of the third and fourth rising edges of the K clock (starting 2.0 cycles later after read command). The data-outs from the second and fourth bursts are updated with the third and fourth rising edges of the K# clock where the read command receives at the first rising edge of K. Two full clock cycles are required to complete a read operation. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interfaces.

  • 512Kx36 configuration available
  • On-chip Delay-Locked Loop (DLL) for wide datavalid window
  • Separate independent read and write ports withconcurrent read and write operations
  • Synchronous pipeline read with late write operation
  • Double Data Rate (DDR) interface for read andwrite input ports
  • 2.0 cycle read latency
  • Fixed 4-bit burst for read and write operations
  • Clock stop support
  • Two input clocks (K and K#) for address and controlregistering at rising edges only
  • Two echo clocks (CQ and CQ#) that are deliveredsimultaneously with data
  • Data Valid Pin (QVLD)
  • +1.8V core power supply and 1.5, 1.8V Vddq, usedwith 0.75, 0.9V Vref
  • HSTL input and output interface
  • Registered addresses, write and read controls, bytewrites, data in, and data outputs
  • Full data coherency
  • Boundary scan using limited set of JTAG 1149.1functions
  • Byte write capability
  • Fine ball grid a

Technical Attributes

Find Similar Parts

Description Value
17 Bit
Pipelined
400 MHz
DDR
18 Mbit
Tin-Silver-Copper
260 °C
400 MHz
620 mA
0.45 ns
18 Mbit
Surface Mount
MSL 3 - 168 hours
165
36 Bit
36 Bit
1
512 kWords
0 to 70 °C
70 °C
0 °C
165FBGA
165
17 x 15 x 0.94 mm
0
Commercial
Quad DDR SRAM
FBGA
1.8 V
1.8000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.A
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 196 Weeks
Price for: Each
Quantity:
Min:105  Mult:105  
USD $:
105+
$42.9264
210+
$42.7096
420+
$42.4928
840+
$42.276
1680+
$39.5954