IS61LV2568L-10TL-TR
ISNIS61LV2568L-10TL-TR SRAM, 2M, 8BIT, H
The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with CMOS input levels. The IS61LV2568L operates from a single 3.3V power supply and all inputs are TTL-compatible. The IS61LV2568L is available in 36-pin 400-mil SOJ and 44-pin TSOP (Type II) packages.
- High-speed access time: 8, 10 ns
- Operating Current: 50mA (typ.)
- Standby Current: 700µA (typ.)
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- TTL compatible inputs and outputs
- Single 3.3V power supply
- Packages available:
- 36-pin 400-mil SOJ
- 44-pin TSOP (Type II)
- Lead-free available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 2 Mbit | ||
| 60 mA | ||
| 10 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| 44 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 256 kWords | ||
| 0 to 70 °C | ||
| 70 °C | ||
| 0 °C | ||
| 44TSOP-II | ||
| T/R | ||
| 0 | ||
| Commercial | ||
| 3.63 V | ||
| 2.97 V | ||
| 3.3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: