IS61LV25616AL-10TLI-TR
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II T/R
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bitstatic RAM organized as 262,144 words by 16 bits. It isfabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovativecircuit design techniques, yields high-performance andlowpower consumption devices. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The IS61LV25616AL is packaged in the JEDEC standard44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFPand 48-pin Mini BGA (8mm x 10mm)
- High-speed access time:
- 10, 12 ns
- CMOS low power operation
- Low stand-by power:
- Less than 5 mA (typ.) CMOS stand-by
- TTL compatible interface levels
- Single 3.3V power supply
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial temperature available
- Lead-free available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 4 Mbit | ||
| Matte Tin | ||
| 260 | ||
| 110 mA | ||
| 10 ns | ||
| 4 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.51 x 10.26 x 1.05 mm | ||
| No | ||
| Industrial | ||
| TSOP-II | ||
| 3.63 V | ||
| 3.135 V | ||
| 3.3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |