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IS61LF102418B-7.5TQLI-TR

SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 7.5ns 100-Pin LQFP T/R

Manufacturer:ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS61LF102418B-7.5TQLI-TR
Secondary Manufacturer Part#: IS61LF102418B-7.5TQLI-TR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The 18Mb product family features high-speed, low power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.The IS61LF102418B are organized as 1,048,576 words by 18 bits. Fabricated advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. The byte write operation is performed by using the byte write enable (/BWE) input combined with one or more individual byte write signals (/BWx). In addition, Global Write (/GW) is available for writing all bytes at one time, regardless of the byte write controls. Bursts can be initiated with either /ADSP(Address Status Processor) or /ADSC\ (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally and controlled by the /ADV\ (burst address advance) input pin. The mode pin is used to select the burst sequence order. Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth expansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Single cycle deselect
  • Snooze MODE for reduced-power standby
  • JEDEC 100-pin QFP, 165-ball BGA and 119-ball BGA packages
  • Power supply
    • Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
  • JTAG Boundary Scan for BGA packages
  • Commercial and Industrial temperature support
  • Lead-free available.

Technical Attributes

Find Similar Parts

Description Value
20 Bit
Flow-Through
117 MHz
SDR
18 Mbit
260
117 MHz
7.5 ns
18 Mbit
Surface Mount
MSL 3 - 168 hours
100
18 Bit
18 Bit
2
1 MWords
-40 to 85 °C
85 °C
-40 °C
100LQFP
100
14 x 20 x 1.4
No
Industrial
Synchronous SRAM
LQFP
3.3 V
Synchronous
3.3000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.A
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 84 Weeks
Price for: Each
Quantity:
Min:800  Mult:800  
USD $:
800+
$14.63
1600+
$14.06
3200+
$13.49
6400+
$12.92
12800+
$12.6825