IS61C25616AL-10TLI
SRAM Chip Async Single 5V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II
The ISSI IS61C25616AL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.
- High-speed access time: 10ns, 12 ns
- Low Active Power: 150 mW (typical)
- Low Standby Power: 10 mW (typical) CMOS standby
- TTL compatible interface levels
- Single 5V ± 10% power supply
- Fully static operation: no clock or refresh required
- Available in 44-pin SOJ package and 44-pin TSOP (Type II)
- Commercial, Industrial and Automotive temperature ranges available
- Lead-free available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 4 Mbit | ||
| Matte Tin | ||
| 260 | ||
| 50 mA | ||
| 10 ns | ||
| 4 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.52 x 10.29 x 1.05 mm | ||
| No | ||
| Industrial | ||
| TSOP-II | ||
| 5.5 V | ||
| 4.5 V | ||
| 5 V | ||
| Asynchronous | ||
| 5.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: