IS43LD16640C-25BLI

The IS43LD16640C is 1Gbit CMOS LPDDR2 DRAM. The device is organized as 8 banks of 8Meg words of 16bits or 4Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 4n bits prefetched to achieve very high bandwidth.

• Low-voltage Core and I/O Power Supplies
  • Vdd2 = 1.14-1.30V, Vddca/Vddq = 1.14-1.30V, Vdd1 = 1.70-1.95V
• High Speed Un-terminated Logic(HSUL_12) I/O Interface
• Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O)
• Four-bit Pre-fetch DDR Architecture
• Multiplexed, double data rate, command/address inputs
• Four internal banks for concurrent operation
• Bidirectional/differential data strobe per byte of data (DQS/DQS#)
• Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
• ZQ Calibration
• On-chip temperature sensor to control self refresh rate
• Partial –array self refresh(PASR)
• Deep power-down mode(DPD)
• Operation Temperature
  • Commercial (TC = 0°C to 85°C)
  • Industrial (TC = -40°C to 85°C)
• Configuration:
  • 64Mx16 (8M x 16 x 8 banks)
• Package
  • 134-ball BGA for x16 / x32