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IS43DR81280C-25DBL

DRAM Chip DDR2 SDRAM 1G-Bit 128Mx8 1.8V 60-Pin TWBGA

Manufacturer:ISSI
Product Category: Memory, DRAMs
Avnet Manufacturer Part #: IS43DR81280C-25DBL
Secondary Manufacturer Part#: IS43DR81280C-25DBL
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IS43DR81280C 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
  • JEDEC standard 1.8V I/O (SSTL_18-compatible)
  • Double data rate interface: two data transfers per clock cycle
  • Differential data strobe (DQS, DQS)
  • 4-bit prefetch architecture
  • On chip DLL to align DQ and DQS transitions with CK
  • 8 internal banks for concurrent operation
  • Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported
  • Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
  • WRITE latency = READ latency - 1 tCK
  • Programmable burst lengths: 4 or 8
  • Adjustable data-output drive strength, full and reduced strength options
  • On-die termination (ODT)
  • Configuration(s): 128Mx8 (16Mx8x8 banks): IS43DR81280C
  • Package: x8: 60-ball BGA (8mm x 10.5mm)
  • Timing – Cycle time
    • 2.5ns @CL=5 DDR2-800D
    • 2.5ns @CL=6 DDR2-800E
    • 3.0ns @CL=5 DDR2-667D
    • 3.75ns @CL=4 DDR2-533C
    • 5ns @CL=3 DDR

Technical Attributes

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Description Value
14 Bit
400 MHz
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260 °C
400 MHz
115 mA
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MSL 3 - 168 hours
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1.8000 V
0 to 85 °C
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ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542320032
Schedule B: 8542320015
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:242  Mult:242  
USD $:
242+
$4.96386
484+
$4.93879
968+
$4.91372
1936+
$4.49865
3872+
$4.47558