IS43DR16640B-3DBLI-TR
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA T/R
- Clock frequency up to 400MHz
- 8 internal banks for concurrent operation
- 4-bit prefetch architecture
- Programmable CAS Latency: 3, 4, 5, 6 and 7
- Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6
- Write Latency = Read Latency-1
- Programmable Burst Sequence: Sequential or Interleave
- Programmable Burst Length: 4 and 8
- Automatic and Controlled Precharge Command
- Power Down Mode
- Auto Refresh and Self Refresh
- Refresh Interval: 7.8 µs (8192 cycles/64 ms)
- ODT (On-Die Termination)
- Weak Strength Data-Output Driver Option
- Bidirectional differential Data Strobe (Singleended data-strobe is an optional feature)
- On-Chip DLL aligns DQ and DQs transitions with CK transitions
- DQS# can be disabled for single-ended data strobe
- Read Data Strobe supported (x8 only)
- Differential clock inputs CK and CK#
- VDD and VDDQ = 1.8V ± 0.1V
- PASR (Partial
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 Bit | ||
| 333 MHz | ||
| 16 Bit | ||
| 1 Gbit | ||
| DDR2 SDRAM | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 333 MHz | ||
| 120 mA | ||
| 1 Gbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 84 | ||
| 8 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1.8 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64M x 16 | ||
| 84TWBGA | ||
| 84 | ||
| 8 x 12.5 x 0.8(Max) | ||
| Industrial | ||
| TWBGA | ||
| 1.8 V | ||
| DDR2 SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320032 |
| Schedule B: | 8542320015 |
Factory Lead Time: