IS43DR16160B-3DBL-TR
DRAM Chip DDR2 SDRAM 256M-Bit 16M X 16 1.8V 84-Pin TWBGA T/R
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-compatible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 4 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported
- Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
- WRITE latency = READ latency - 1 tCK
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and reduced strength options
- On-die termination (ODT)
- Configuration: 16Mx16 (4Mx16x4 banks) IS43DR16160B
- Package:
- 84-ball TW-BGA (8mm x 12.5mm)
- Timing – Cycle time
- 2.5ns @CL=5 DDR2-800D
- 2.5ns @CL=6 DDR2-800E
- 3.0ns @CL=5 DDR2-667D
- 3.75ns @CL=4 DDR2-533C
- 5.0ns @CL
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 Bit | ||
| 333 MHz | ||
| 16 Bit | ||
| 256 Mbit | ||
| DDR2 SDRAM | ||
| Tin-Silver-Copper | ||
| 260 °C | ||
| 333 MHz | ||
| 170 mA | ||
| 0.4 ns | ||
| 16M x 16bit | ||
| 256 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 84 | ||
| 4 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1.8000 V | ||
| 0 to 85 °C | ||
| 85 °C | ||
| 0 °C | ||
| 16M x 16 | ||
| 84TWBGA | ||
| 84 | ||
| 8 x 12.5 x 0.8 mm | ||
| Commercial | ||
| TWBGA | ||
| DDR2 SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320024 |
| Schedule B: | 8542320015 |
Factory Lead Time: