IS42VM16160K-75BLI
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin TFBGA
IS42VM16160K-75BLI is a mobile 268,435,456 bits CMOS synchronous DRAM that organized as 4 banks of 4,194,304 words x 16bits. This product is offering fully synchronous operation and is referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.
- Auto refresh and self-refresh, all pins are compatible with the LVCMOS interface
- 8K refresh cycle / 64ms
- Programmable burst length and burst type, 1, 2, 4, 8 or full page for sequential burst
- Programmable CAS latency is 2, 3 clocks
- All inputs and outputs referenced to the positive edge of the system clock
- Data mask function by DQM, internal 4 banks operation, burst read single write operation
- Special function support, partial array self refresh, auto temperature compensated self refresh
- Automatic precharge, includes CONCURRENT auto precharge mode and controlled precharge
- 16Mx16 configuration, 133MHz frequency, 7.5ns speed, VDD = 1.8V
- 54-ball BGA package, industrial temperature rating range from -40°C to +85°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 Bit | ||
| 133 MHz | ||
| 16 Bit | ||
| 256 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 133 MHz | ||
| 60 mA | ||
| 8|6 ns | ||
| 256 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 54 | ||
| 4 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1.8 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 16M x 16 | ||
| 54TFBGA | ||
| 54 | ||
| 8 x 8 x 0.8(Max) | ||
| Industrial | ||
| TFBGA | ||
| 1.8 V | ||
| Mobile SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320024 |
| Schedule B: | 8542320015 |
Factory Lead Time: