IS42VM16160K-6BLI-TR
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin TFBGA T/R
These IS42VM16160K is mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.
- JEDEC standard 3.3V, 2.5V, 1.8V power supply.
- Auto refresh and self refresh.
- All pins are compatible with LVCMOS interface.
- 8K refresh cycle / 64ms.
- Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
- Programmable CAS Latency : 2,3 clocks.
- All inputs and outputs referenced to the positive edge of the system clock.
- Data mask function by DQM.
- Internal 4 banks operation.
- Burst Read Single Write operation.
- Special Function Support.
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
- Programmable Driver Strength Control
- Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength
- Deep Power Down Mode
- Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 Bit | ||
| 166 MHz | ||
| 16 Bit | ||
| 256 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 166 MHz | ||
| 60 mA | ||
| 8|5.5 ns | ||
| 256 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 54 | ||
| 4 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1.8 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 16M x 16 | ||
| 54TFBGA | ||
| 54 | ||
| 8 x 8 x 0.8(Max) | ||
| Industrial | ||
| TFBGA | ||
| 1.8 V | ||
| Mobile SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320024 |
| Schedule B: | 8542320015 |
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