S78HS512TC0BHB010
Combo Memory, 8-Bit, 64 Mbit DDR, 512 Mbit NOR Based MCP, 24 Pins, FBGA
- RoHS 10 Compliant
- Tariff Charges
- SEMPER™ Flash and HYPERRAM™ 2.0 with HYPERBUS™ interface in multi-chip package (MCP)
- 1.8V, 512Mb SEMPER™ Flash and 64Mb HYPERRAM™ 2.0
- 512Mb SEMPER™ flash density, 45-nm MIRRORBIT™ Process technology SEMPER™ flash device technology
- 64Mb HYPERRAM™ density, 24-ball FBGA 8 x 8 x 1.2mm package type, low-halogen package material
- Automotive, AEC-Q100 grade 2, operating temperature range from -40°C to +105°C, 200MHz
- Chip select (CS#), 8-bit data bus (DQ[7:0]), data strobe (DS/RWDS)
- Bidirectional DS/mask, output at the start of all transactions to indicate refresh latency
- Output during read transactions as read DS, optional signals
- Busy to ready transition, RSTO# output to generate system level power-on-reset (POR)
- User configurable RSTO# LOW period, high-performance, DDR, two data transfers per clock
Technical Attributes
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| Description | Value |
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991B1A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |