S70GL02GS11FHI020

The Spansion S70GL02GS 2-Gigabit MirrorBit Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.

• Two 1024 Megabit (S29GL01GS) in a single 64-ball FortifiedBGA package
• 65 nm MirrorBit Eclipse process technology
• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Versatile I/O Feature
  • Wide I/O voltage (VIO): 1.65V to VCC
• x16 data bus
• 16-word/32-byte page read buffer
• 512-byte Programming Buffer
  • Programming in Page multiples, up to a maximum of 512 bytes
• Sector Erase
  • Uniform 128-kbyes sectors
  • S70GL02GS: two thousand forty-eight sectors
• Suspend and Resume commands for Program and Erase operations
• Status Register, Data Polling, and Ready/Busy pin methods to determine device status
• Advanced Sector Protection (ASP)
  • Volatile and non-volatile protection methods for each sector
• Separate 1024-bye One Time Program (OTP) array with two lockable regions
  • Available in each deviceSupport for CFI (Common Flas