S70GL02GS11FHI010
NOR Flash Parallel 3V/3.3V 2Gbit 256M/128M x 8bit/16bit 110ns 64-Pin FBGA Tray
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Manufacturer:Infineon
Product Category:
Memory, Flash Memory
Avnet Manufacturer Part #: S70GL02GS11FHI010
Secondary Manufacturer Part#: S70GL02GS11FHI010
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RoHS 10 Compliant -
Tariff Charges
The Spansion S70GL02GS 2-Gigabit MirrorBit Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.
- Two 1024 Megabit (S29GL01GS) in a single 64-ball FortifiedBGA package
- 65 nm MirrorBit Eclipse process technology
- Single supply (VCC) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature
- Wide I/O voltage (VIO): 1.65V to VCC
- x16 data bus
- 16-word/32-byte page read buffer
- 512-byte Programming Buffer
- Programming in Page multiples, up to a maximum of 512 bytes
- Sector Erase
- Uniform 128-kbyes sectors
- S70GL02GS: two thousand forty-eight sectors
- Suspend and Resume commands for Program and Erase operations
- Status Register, Data Polling, and Ready/Busy pin methods to determine device status
- Advanced Sector Protection (ASP)
- Volatile and non-volatile protection methods for each sector
- Separate 1024-bye One Time Program (OTP) array with two lockable regions
- Available in each deviceSupport for CFI (Common Flas
Technical Attributes
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| Description | Value | |
|---|---|---|
| 110 ns | ||
| 27 Bit | ||
| Sectored | ||
| Symmetrical | ||
| Yes | ||
| NOR | ||
| 2 Gbit | ||
| No | ||
| Yes | ||
| Parallel NOR | ||
| LFBGA | ||
| Surface Mount | ||
| Parallel | ||
| CFI, Parallel | ||
| Tin-Silver-Copper | ||
| Bottom|Top | ||
| 260 | ||
| 60 mA | ||
| 3.6 V | ||
| 20 ns | ||
| 110 ns | ||
| 256M x 8bit | ||
| 2 Gbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 64 | ||
| 8, 16 Bit | ||
| 256, 128 MWords | ||
| 25 ns | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64FBGA | ||
| 64 | ||
| 13 x 11 x 1.4 mm | ||
| 3V Parallel NOR Flash Memories | ||
| 100 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| MCP | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| 3, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.1.A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |
Factory Lead Time: