S29JL064J60TFI000
NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 60ns 48-Pin TSOP Tray
- RoHS 10 Compliant
- Tariff Charges
The S29JL064J is a 64 Mbit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 55, 60, 70 ns and is offered in a 48-ball FBGA or 48-pin TSOP package. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
- Architectural Advantages
- Simultaneous Read/Write operations
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency between read and write operations
- Flexible bank architecture
- Read may occur in any of the three banks not being programmed or erased
- Four banks may be grouped by customer to achieve desired bank divisions
- Boot sectors
- Top and bottom boot sectors in the same device
- Any combination of sectors can be erased
- Manufactured on 0.11 µm Process Technology
- Secured Silicon Region: Extra 256-byte sector
- Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function
- Customer lockable: One-time programmable only. Once locked, data cannot be changed
- Zero power operation
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Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 ns | ||
| Parallel NOR | ||
| TSOP | ||
| Surface Mount | ||
| CFI, Parallel | ||
| 8M x 8bit, 4M x 16bit | ||
| 64 Mbit | ||
| 48 | ||
| 85 °C | ||
| -40 °C | ||
| 3V Parallel NOR Flash Memories | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | 3A991B1A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |