S29GL512T11FHIV20
NOR Flash Parallel 3V 512Mbit 64M/32M x 8bit/16bit 110ns 64-Pin FBGA Tray
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Manufacturer:Infineon
Product Category:
Memory, Flash Memory
Avnet Manufacturer Part #: S29GL512T11FHIV20
Secondary Manufacturer Part#: S29GL512T11FHIV20
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RoHS 10 Compliant -
Tariff Charges
The S29GL512T are Mirror Bit Eclipse flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 45 nm MirrorBit Eclipse Technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- Versatile I/O feature
- Wide I/O voltage range (VIO): 1.65 V to Vcc
- x8/x16 data bus
- Asynchronous 32-byte Page read
- 512-byte Programming Buffer
- Programming in Page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Sector Erase
- Uniform 128-kbyte sectors
- Suspend and Resume commands for Program and Erase operations
- Status Register, Data Polling, and Ready/Busy pin methods to determine device status
- Advanced Sector Protection (ASP)
- Volatile and non-volatile protection methods for each sector
- Separate 2048-byte One Time Program (OTP) array
- Four lockable regions (SSR0 - SSR3)
- SSR0 is Factory Locked
- SSR3 is Password Read Protect
- Common Flash Interface (C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 110 ns | ||
| 25 Bit | ||
| Sectored | ||
| Symmetrical | ||
| Yes | ||
| NOR | ||
| 512 Mbit | ||
| No | ||
| Yes | ||
| Parallel NOR | ||
| LFBGA | ||
| Surface Mount | ||
| Parallel | ||
| CFI, Parallel | ||
| Tin-Silver-Copper | ||
| Bottom|Top | ||
| 260 | ||
| 1792/Chip s | ||
| 60 mA | ||
| 3.6 V | ||
| 25 ns | ||
| 192/Sector ms | ||
| 110 ns | ||
| 64M x 8bit | ||
| 512 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 64 | ||
| 8, 16 Bit | ||
| 64, 32 MWords | ||
| 35 ns | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64FBGA | ||
| 25 mA | ||
| 64 | ||
| 13 x 11 x 1(Max) | ||
| 3V Parallel NOR Flash Memories | ||
| 100 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| FBGA | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991B1A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |
Factory Lead Time: