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S29GL512S11DHIV23

NOR Flash Parallel 3V 512M-bit 32M x 16bit 110ns 64-Pin FBGA T/R

Manufacturer:Infineon
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: S29GL512S11DHIV23
Secondary Manufacturer Part#: S29GL512S11DHIV23
  • Legend Information Icon RoHS 10 Compliant
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S29GL512S11DHIV23 is a MIRRORBIT™ Eclipse flash product fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

  • 110ns random access time
  • CMOS 3.0V core with versatile I/O, 65nm MIRRORBIT™ Eclipse technology
  • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
  • ×16 data bus, asynchronous 32-byte page read
  • Programming in page multiples, up to a maximum of 512 bytes
  • Automatic error checking and correction – internal hardware ECC with single bit error correction
  • Suspend and resume commands for program and erase operations
  • Status register, data polling, and ready/busy pin methods to determine device status
  • Volatile and non-volatile protection methods for each sector
  • Fortified ball-grid array package (LAE064), industrial temperature range from -40°C to +85°C

Technical Attributes

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Country of Origin: RECOVERY FEE
ECCN: 3A991B1A
HTSN: 8542320071
Schedule B: 8542320070
In Stock :  0
Additional inventory
Factory Lead Time: 70 Weeks
Price for: Each
Quantity:
Min:2200  Mult:2200  
USD $:
2200+
$7.25714
4400+
$6.86486
8800+
$6.68421
17600+
$6.51282
35200+
$6.35