S29GL512S11DHI020
NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16bit 110ns 64-Pin FBGA Tray
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Manufacturer:Infineon
Product Category:
Memory, Flash Memory
Avnet Manufacturer Part #: S29GL512S11DHI020
Secondary Manufacturer Part#: S29GL512S11DHI020
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RoHS 10 Compliant -
Tariff Charges
The S29GL512S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for embedded applications that require higher density, better performance and lower power consumption.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 110 ns | ||
| 25 Bit | ||
| Sectored | ||
| Symmetrical | ||
| Yes | ||
| NOR | ||
| 512 Mbit | ||
| No | ||
| Yes | ||
| Parallel NOR | ||
| LFBGA | ||
| Surface Mount | ||
| Parallel | ||
| CFI, Parallel | ||
| Tin-Silver-Copper | ||
| Bottom|Top | ||
| 260 | ||
| 1.1/Sector s | ||
| 60 mA | ||
| 3.6 V | ||
| 20 ns | ||
| 192/Sector ms | ||
| 110 ns | ||
| 32M x 16bit | ||
| 512 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 64 | ||
| 16 Bit | ||
| 32 MWords | ||
| 25 ns | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64FBGA | ||
| 25 mA | ||
| 64 | ||
| 9 x 9 x 0.6 mm | ||
| 3V Parallel NOR Flash Memories | ||
| 100 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| FBGA | ||
| 3.6 V | ||
| 2.7 V | ||
| 3, 3.3 V | ||
| 3, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B1A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |
Factory Lead Time: