S29GL256P11FFI010
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
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Manufacturer:Infineon
Product Category:
Memory, Flash Memory
Avnet Manufacturer Part #: S29GL256P11FFI010
Secondary Manufacturer Part#: S29GL256P11FFI010
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RoHS 10 Compliant -
Tariff Charges
The S29GL256P11FFI010 is a 256MB page mode Flash Memory fabricated on 90nm MirrorBit® Process technology. This device offers a fast page access time of 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
- Highest address sector protected
- Versatile I/O™ control
- Secured silicon sector region - Can be programmed and locked at the factory or by the customer
- 100000 Erase cycles per sector typical
- 20 Years data retention typical
- Suspend and resume commands for program and erase operations
- Write operation status bits indicate program and erase operation completion
- Unlock bypass program command - Reduces programming time
- Support for CFI
- Persistent and password methods of advanced sector protection
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 110 ns | ||
| 25, 24 Bit | ||
| Sectored | ||
| Symmetrical | ||
| No | ||
| NOR | ||
| 256 Mbit | ||
| No | ||
| Yes | ||
| Parallel NOR | ||
| LFBGA | ||
| Surface Mount | ||
| Parallel | ||
| CFI, Parallel | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 512/Chip s | ||
| 110 mA | ||
| 25 ns | ||
| 246000/Chip ms | ||
| 110 ns | ||
| 32M x 8bit, 16M x 16bit | ||
| 256 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 64 | ||
| 8, 16 Bit | ||
| 32, 16 MWords | ||
| 25 ns | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64Fortified BGA | ||
| 10 mA | ||
| 64 | ||
| 13 x 11 x 0.6 mm | ||
| 3V Parallel NOR Flash Memories | ||
| 90 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| BGA | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| 3, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.1.A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |
Factory Lead Time: