S29GL128P10TFI010
Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 100ns 56-Pin TSOP Tray
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Manufacturer:Infineon
Product Category:
Memory, Flash Memory
Avnet Manufacturer Part #: S29GL128P10TFI010
Secondary Manufacturer Part#: S29GL128P10TFI010
- RoHS 10 Compliant
- Tariff Charges
The Spansion S29GL128P is Mirrorbit Flash product fabricated on 90 nm process technology. This device offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. It feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
- Single 3V read/program/erase (2.7-3.6 V)
- Enhanced VersatileI/O™ control
- All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
- 90 nm MirrorBit process technology
- 8-word/16-byte page read buffer
- 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
- Secured Silicon Sector region
- 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
- Can be programmed and locked at the factory or by the customer
- Uniform 64 Kword/128 Kbyte Sector Architecture
- S29GL128P: One hundred twenty-eight sectors
- 100,000 erase cycles per sector typical
- 20-year data retention typical
- Offered Packages
- 56-pin TSOP
- 64-ball Fortified BGA
- Suspend and Resume commands for Pro
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 100 ns | ||
| 24, 23 Bit | ||
| Sectored | ||
| Symmetrical | ||
| No | ||
| NOR | ||
| 128 Mbit | ||
| No | ||
| Yes | ||
| Parallel NOR | ||
| TSOP | ||
| Surface Mount | ||
| Parallel | ||
| CFI, Parallel | ||
| Matte Tin | ||
| 260 | ||
| 256/Chip s | ||
| 110 mA | ||
| 25 ns | ||
| 123000/Chip ms | ||
| 100 ns | ||
| 16M x 8bit, 8M x 16bit | ||
| 128 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 56 | ||
| 8, 16 Bit | ||
| 16, 8 MWords | ||
| 25 ns | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 56TSOP | ||
| 10 mA | ||
| 56 | ||
| 14 x 18.4 x 1 mm | ||
| 3V Parallel NOR Flash Memories | ||
| 90 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| TSOP | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| 3, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.1.A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |