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S29GL128P10TFI010

Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 100ns 56-Pin TSOP Tray

Manufacturer:Infineon
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: S29GL128P10TFI010
Secondary Manufacturer Part#: S29GL128P10TFI010
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The Spansion S29GL128P is Mirrorbit Flash product fabricated on 90 nm process technology. This device offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. It feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

  • Single 3V read/program/erase (2.7-3.6 V)
  • Enhanced VersatileI/O™ control
    • All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
  • 90 nm MirrorBit process technology
  • 8-word/16-byte page read buffer
  • 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
  • Secured Silicon Sector region
    • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
    • Can be programmed and locked at the factory or by the customer
  • Uniform 64 Kword/128 Kbyte Sector Architecture
    • S29GL128P: One hundred twenty-eight sectors
  • 100,000 erase cycles per sector typical
  • 20-year data retention typical
  • Offered Packages
    • 56-pin TSOP
    • 64-ball Fortified BGA
  • Suspend and Resume commands for Pro

Technical Attributes

Find Similar Parts

Description Value
100 ns
24, 23 Bit
Sectored
Symmetrical
No
NOR
128 Mbit
No
Yes
Parallel NOR
TSOP
Surface Mount
Parallel
CFI, Parallel
Matte Tin
260
256/Chip s
110 mA
25 ns
123000/Chip ms
100 ns
16M x 8bit, 8M x 16bit
128 Mbit
Surface Mount
MSL 3 - 168 hours
56
8, 16 Bit
16, 8 MWords
25 ns
-40 to 85 °C
85 °C
-40 °C
56TSOP
10 mA
56
14 x 18.4 x 1 mm
3V Parallel NOR Flash Memories
90 mA
2.7 to 3.6 V
No
Industrial
No
TSOP
3.6 V
2.7 V
3 V
3, 3.3 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.1.A
HTSN: 8542320071
Schedule B: 8542320070
In Stock :  0
Additional inventory
Factory Lead Time: 2 Weeks
Price for: Each
Quantity:
Min:125  Mult:1  
USD $: