S29GL064S70TFI040

S29GL064S70TFI040 is a flash memory manufactured using 65-nm MIRRORBIT™ technology. The S29GL064S is a 64Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers. The device is entirely command set compatible with the JEDEC single-power-supply flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The device requires only a single 3.0V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input.

• 100,000 erase cycles per sector minimum, 20-year data retention typical
• High performance, 70ns access time
• 8-word / 16-byte page read buffer, 15ns page read time
• 128-word/256-byte write buffer which reduces overall programming time for multiple-word updates
• Automatic error checking and correction - internal hardware ECC with single bit error correction
• 25mA typical initial read current at 5MHz, CE#=VIL, OE#=VIH, VCC=VCC max
• 2.7V to 3.6V power supply range
• VCC standby current is 40µA typ at CE#, RESET#=VIH, OE#=VIH, VIL=VSS, VIH=VIO, VCC=VCC max
• PG-TSOP-48 package
• Industrial temperature range from -40°C to +85°C