S29GL032N90TFI023

The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032N is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

• Single power supply operation
• Manufactured on 110 nm MirrorBit process technology
• Secured Silicon Sector region
  • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
  • Programmed and locked at the factory or by the customer
• Flexible sector architecture
  • 64Mb (uniform sector models): One hundred twenty-eight 32 Kword (64 KB) sectors
  • 64 Mb (boot sector models): One hundred twenty-seven 32 Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors
  • 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
  • 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors
• Enhanced VersatileI/O™ Control
  • All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
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