S25FL256SDPMFV000
NOR Flash Serial-SPI 3V 256Mbit 256M x 1bit 8ns 16-Pin SOIC Tray
- RoHS 10 Compliant
- Tariff Charges
The Spansion S25FL256S device is flash non-volatile memory products using: MirrorBit technology - that stores two data bits in each memory array transistor Eclipse architecture - that dramatically improves program and erase performance 65 nm process lithography This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (SIngle I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. The S25FL256S product offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
- Density
- 256 Mbits (32 Mbytes)
- Serial Peripheral Interface (SPI)
- SPI Clock polarity and phase modes 0 and 3
- Double Data Rate (DDR) option
- Extended Addressing: 24- or 32-bit address options
- Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
- Multi I/O Command set and footprint compatible with S25FL-P SPI family
- READ Commands
- Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR
- AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address
- Common Flash Interface (CFI) data for configuration information.
- Programming (1.5 Mbytes/s)
- 256 or 512 Byte Page Programming buffer options
- Quad-Input Page Programming (QPP) for slow clock systems
- Erase (0.5 to 0.65 Mbytes/s)
- Hybrid sector size option - physical set of thirty two 4-kbyte secto
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 8 ns | ||
| 32 Bit | ||
| Sectored | ||
| Symmetrical | ||
| Yes | ||
| NOR | ||
| 66 MHz | ||
| 256 Mbit | ||
| No | ||
| Yes | ||
| Serial-SPI | ||
| SPI | ||
| Tin | ||
| Bottom|Top | ||
| 260 | ||
| 330/Chip s | ||
| 75 mA | ||
| 0.75/Page ms | ||
| 8 ns | ||
| 256 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 16 | ||
| 1 Bit | ||
| 256 MWords | ||
| -40 to 105 °C | ||
| 105 °C | ||
| -40 °C | ||
| 16SOIC | ||
| 16 | ||
| 10.3 x 7.5 x 2.55(Max) | ||
| 100 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Automotive | ||
| No | ||
| SOIC | ||
| 3 V | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B1A |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |