S25FL127SABMFI100
NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1bit 8-Pin SOIC Tray
- RoHS 10 Compliant
- Tariff Charges
The Spansion S25FL127S device is a flash non-volatile memory product using: MirrorBit technology - that stores two data bits in each memory array transistor Eclipse architecture - that dramatically improves program and erase performance 65 nm process lithography This device connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (SIngle I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. The S25FL127S product offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.
- Density
- 128 Mbits (16 Mbytes)
- Serial Peripheral Interface (SPI)
- SPI Clock polarity and phase modes 0 and 3
- Extended Addressing: 24- or 32-bit address options
- Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
- Multi I/O Command set and footprint compatible with S25FL-P SPI family
- READ Commands
- Normal, Fast, Dual, Quad
- AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address
- Common Flash Interface (CFI) data for configuration information.
- Programming (0.8 Mbytes/s)
- 256- or 512-byte Page Programming buffer options
- Quad-Input Page Programming (QPP) for slow clock systems
- Erase (0.5 Mbytes/s)
- Hybrid sector size option - physical set of sixteen 4-kbyte sectors at top or bottom of address space with all remaining sectors of 64 kbytes
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 8 ns | ||
| Sectored | ||
| Asymmetrical | ||
| Yes | ||
| NOR | ||
| 108 MHz | ||
| 128 Mbit | ||
| No | ||
| Yes | ||
| Serial NOR | ||
| SOIC | ||
| Surface Mount | ||
| Serial (SPI) | ||
| CFI, QSPI | ||
| Tin | ||
| Bottom|Top | ||
| 260 | ||
| 210/Chip s | ||
| 47 mA | ||
| 1.48/Page ms | ||
| 8 ns | ||
| 16M x 8bit | ||
| 128 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 8 | ||
| 1 Bit | ||
| 128 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 8SOIC | ||
| 8 | ||
| 5.283 x 5.283 x 1.91(Max) | ||
| 3V Serial NOR Flash Memories | ||
| 50 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| SOIC | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| 3, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |