S25FL064LABMFB011

S25FL064LABMFB011 is a S25FL064L non-volatile SPI flash memory IC using floating gate technology, 65nm process lithography. The FL-L family connects to a host system via a serial peripheral interface (SPI). In addition, there are double data rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The architecture features a page programming buffer that allows up to 256bytes to be programmed in one operation and provides individual 4KB sector, 32KB half block sector, 64KB block sector, or entire chip erase. The FL-L family offers high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. This memory offers flexibility and performance well beyond ordinary serial flash devices. It is ideal for code shadowing to RAM, executing code directly (XIP), and storing re-programmable data.

• Serial peripheral interface (SPI) with multi-I/O, clock polarity and phase modes 0 and 3
• Multi I/O command subset and footprint compatible with S25FL-P, S25FL-S and S25FS-S SPI families
• Serial flash discoverable parameters (SFDP) for configuration information
• 256-bytes page programming buffer, program suspend and resume
• Uniform 4KB sector erase, uniform 32KB half block erase, uniform 64KB block erase
• 100000 program-erase cycles minimum, 20 year data retention minimum
• Status and configuration register protection, individual and region protection
• Single supply voltage with CMOS I/O is 2.7V to 3.6V
• 64Mb density, 108MHz SDR and 54MHz DDR speed, 8-lead SOIC / 16-lead SOIC package
• Automotive, AEC-Q100 grade 2 (–40°C to +105°C) temperature range