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IRS2336SPBF

MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin SOIC W Tube

Manufacturer:Infineon
Avnet Manufacturer Part #: IRS2336SPBF
Secondary Manufacturer Part#: IRS2336SPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IRS2336xD are high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three low-side referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power supplies; the bootstrap diode functionality has been integrated into this device to reduce the component count and the PCB size. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs (down to 3.3 V logic). A current trip function which terminates all six outputs can be derived from an external current sense resistor. Enable functionality is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that a fault (e.g., over-current, over-temperature, or undervoltage shutdown event) has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum deadtime circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600 V.

  • Drives up to six IGBT/MOSFET power devices
  • Gate drive supplies up to 20 V per channel
  • Integrated bootstrap functionality
  • Over-current protection
  • Over-temperature shutdown input
  • Advanced input filter
  • Integrated deadtime protection
  • Shoot-through (cross-conduction) protection
  • Undervoltage lockout for VCC & VBS
  • Enable/disable input and fault reporting
  • Adjustable fault clear timing
  • Separate logic and power grounds
  • 3.3 V input logic compatible
  • Tolerant to negative transient voltage
  • Designed for use with bootstrap power supplies
  • Matched propagation delays for all channels
  • -40°C to 125°C operating range
  • RoHS compliant
  • Lead-Free

Technical Attributes

Find Similar Parts

Description Value
3-Phase Bridge
Inverting
High and Low Side
530 ns
CMOS|TTL
CMOS, TTL, TTL
Matte Tin
260
75 ns
750 ns
190 ns
Surface Mount
MSL 3 - 168 hours
6
28
6
6
-40 to 125 °C
125 °C
-40 °C
530 ns
28SOIC W
0.35 A
28
IGBT, MOSFET, Mosfet
18.1 x 7.6 x 2.35 mm
No
600 V
350 mA
200 mA
SOIC W
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542310075
Schedule B: 8542310075
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
Price for: Each
Quantity:
Min:2000  Mult:25  
USD $: