IRS2336SPBF
MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin SOIC W Tube
- RoHS 10 Compliant
- Tariff Charges
The IRS2336xD are high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three low-side referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power supplies; the bootstrap diode functionality has been integrated into this device to reduce the component count and the PCB size. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs (down to 3.3 V logic). A current trip function which terminates all six outputs can be derived from an external current sense resistor. Enable functionality is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that a fault (e.g., over-current, over-temperature, or undervoltage shutdown event) has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum deadtime circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600 V.
- Drives up to six IGBT/MOSFET power devices
- Gate drive supplies up to 20 V per channel
- Integrated bootstrap functionality
- Over-current protection
- Over-temperature shutdown input
- Advanced input filter
- Integrated deadtime protection
- Shoot-through (cross-conduction) protection
- Undervoltage lockout for VCC & VBS
- Enable/disable input and fault reporting
- Adjustable fault clear timing
- Separate logic and power grounds
- 3.3 V input logic compatible
- Tolerant to negative transient voltage
- Designed for use with bootstrap power supplies
- Matched propagation delays for all channels
- -40°C to 125°C operating range
- RoHS compliant
- Lead-Free
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 3-Phase Bridge | ||
| Inverting | ||
| High and Low Side | ||
| 530 ns | ||
| CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 75 ns | ||
| 750 ns | ||
| 190 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 6 | ||
| 28 | ||
| 6 | ||
| 6 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 530 ns | ||
| 28SOIC W | ||
| 0.35 A | ||
| 28 | ||
| IGBT, MOSFET, Mosfet | ||
| 18.1 x 7.6 x 2.35 mm | ||
| No | ||
| 600 V | ||
| 350 mA | ||
| 200 mA | ||
| SOIC W | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |