IRS21867STRPBF
IGBT Driver, High Side and Low Side, 4 A, 10 V to 20 V, SOIC-8
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Manufacturer:Infineon
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: IRS21867STRPBF
Secondary Manufacturer Part#: IRS21867STRPBF
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RoHS 10 Compliant -
Tariff Charges
The IRS21867STRPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Low VCC operation allows use in battery powered applications. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage, DV/DT Immune
- Low VCC operation
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Lower DI/DT gate driver for better noise immunity
- Logic and power ground ±5V offset
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 170 ns | ||
| 3.3V|5V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| 30 ns | ||
| 250 ns | ||
| 38 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 170 ns | ||
| 8SOIC N | ||
| 4 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 4.98 x 3.99 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 4 A | ||
| 4 A | ||
| SOIC N | ||
| 20 V | ||
| 6.8 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |
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