IRS2153DPBF
Power MOSFET and IGBT Driver, Self-Oscillating 1/2 Bridge, 600V, 8-pin PDIP, Tube
- RoHS 10 Compliant
- Tariff Charges
The IRS2153 is based on the popular IR2153 self-oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.
- Integrated 600 V half-bridge gate driver
- CT, RTprogrammable oscillator
- 15.4 V Zener clamp on VCC
- Micropower startup
- Non-latched shutdown on CT pin (1/6th VCC)
- Internal bootstrap FET
- Excellent latch immunity on all inputs and outputs
- +/- 50 V/ns dV/dt immunity
- ESD protection on all pins
- 8-lead SOIC or PDIP package
- Internal deadtime
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 120 ns | ||
| CMOS | ||
| Matte Tin | ||
| 260 | ||
| 80 ns | ||
| 220 ns | ||
| Through Hole | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 100 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 50 ns | ||
| 8PDIP | ||
| 0.26 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.92 x 7.11 x 5.33 mm | ||
| No | ||
| 600 V | ||
| 260 mA | ||
| 180 mA | ||
| PDIP | ||
| 16.8 V | ||
| 10.1 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |