IRS2112PBF
Power MOSFET and IGBT Driver, Hi/Lo Side, 600V, 14-pin PDIP, Tube
- RoHS 10 Compliant
- Tariff Charges
The IRS2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V logic compatible
- Separate logic supply range from 3.3 V to 20 V
- Logic and power ground +/- 5 V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
- RoHS compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 135 ns | ||
| 3.3V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 65 ns | ||
| 180 ns | ||
| 130 ns | ||
| Through Hole | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 130 ns | ||
| 14PDIP | ||
| 0.6 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 20.19 x 7.11 x 5.33 mm | ||
| No | ||
| 600 V | ||
| 600 mA | ||
| 290 mA | ||
| PDIP | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |