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IRS2111SPBF

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, Tube

Manufacturer:Infineon
Avnet Manufacturer Part #: IRS2111SPBF
Secondary Manufacturer Part#: IRS2111SPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high-side and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

  • Floating channel designed for bootstrap operation
  • Fully operational to +500 V or +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set deadtime
  • High-side output in phase with input
  • RoHS compliant

Technical Attributes

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Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542330001
Schedule B: 8542330000
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
Price for: Each
Quantity:
Min:3800  Mult:95  
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