IRS2111SPBF
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, Tube
- RoHS 10 Compliant
- Tariff Charges
The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high-side and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +500 V or +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High-side output in phase with input
- RoHS compliant
Technical Attributes
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| Description | Value |
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |