IRS2101SPBF
Power MOSFET and IGBT Driver, High Voltage, High Speed, 600V, 8-pin SOIC, Tube
- RoHS 10 Compliant
- Tariff Charges
The IRS2101SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage, DV/DT Immune
- Under-voltage lockout
- Matched propagation delay for both channels
- Outputs in phase with inputs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 160 ns | ||
| 3.3V|5V|15V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 90 ns | ||
| 220 ns | ||
| 170 ns | ||
| 50 ns | ||
| 50 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| 8SOIC | ||
| 0.6 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 600 mA | ||
| 290 mA | ||
| SOIC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |