IRS2007STRPBF
Gate Driver, High Side and Low Side, MOSFET, 8 Pins, SOIC
- RoHS 10 Compliant
- Tariff Charges
IRS2007STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Propagation delay is matched to simplify the HVIC use in high-frequency applications. Typical application includes appliance motor drives, stepper motor, servo drives, micro-inverter drives, general-purpose three-phase inverters, light electric vehicles (e-bikes, e-scooters, e-toys), wireless charging, general battery-driven applications.
- Gate drive supplies up to 20V per channel, undervoltage lockout for VCC, VBS
- 3.3V, 5V, 15V input logic compatible, tolerant to negative transient voltage
- Designed for use with bootstrap power supplies, cross-conduction prevention logic
- Matched propagation delay for both channels, internal set deadtime, 2kV HBM ESD
- High-side output in phase with HIN input, low-side output out of phase with active low LIN input
- Output voltage range from 10 to 20V
- Output high short circuit pulsed current is 200mA min (VO=0V, VIN=VIH, PW ≤ 10µs)
- Output low short circuit pulsed current is 420mA min (VO =15V, VIN=VIH, PW ≤ 10µs)
- Turn-on propagation delay is 160ns typ, turn-off propagation delay is 150ns typ (TA=25°C)
- 8 lead SOIC package, ambient temperature range from -40 to 125°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 160 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| 8SOIC | ||
| 600 mA | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| Extended Industrial | ||
| 600 mA | ||
| 290 mA | ||
| SOIC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |