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IRS2007STRPBF

Gate Driver, High Side and Low Side, MOSFET, 8 Pins, SOIC

Manufacturer:Infineon
Avnet Manufacturer Part #: IRS2007STRPBF
Secondary Manufacturer Part#: IRS2007STRPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

IRS2007STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Propagation delay is matched to simplify the HVIC use in high-frequency applications. Typical application includes appliance motor drives, stepper motor, servo drives, micro-inverter drives, general-purpose three-phase inverters, light electric vehicles (e-bikes, e-scooters, e-toys), wireless charging, general battery-driven applications.

  • Gate drive supplies up to 20V per channel, undervoltage lockout for VCC, VBS
  • 3.3V, 5V, 15V input logic compatible, tolerant to negative transient voltage
  • Designed for use with bootstrap power supplies, cross-conduction prevention logic
  • Matched propagation delay for both channels, internal set deadtime, 2kV HBM ESD
  • High-side output in phase with HIN input, low-side output out of phase with active low LIN input
  • Output voltage range from 10 to 20V
  • Output high short circuit pulsed current is 200mA min (VO=0V, VIN=VIH, PW ≤ 10µs)
  • Output low short circuit pulsed current is 420mA min (VO =15V, VIN=VIH, PW ≤ 10µs)
  • Turn-on propagation delay is 160ns typ, turn-off propagation delay is 150ns typ (TA=25°C)
  • 8 lead SOIC package, ambient temperature range from -40 to 125°C

Technical Attributes

Find Similar Parts

Description Value
Non-Inverting
High and Low Side
160 ns
Surface Mount
MSL 2 - 1 year
2
8
2
-40 to 125 °C
125 °C
-40 °C
150 ns
8SOIC
600 mA
8
IGBT, MOSFET, Mosfet
Extended Industrial
600 mA
290 mA
SOIC
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542390050
Schedule B: 8542390060
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$0.36947
5000+
$0.36394
10000+
$0.35838
20000+
$0.35284
40000+
$0.34729