IRLR9343TRPBF
Power MOSFET, P Channel, 55 V, 20 A, 0.093 ohm, TO-252AA, Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRLR9343TRPBF
Secondary Manufacturer Part#: IRLR9343TRPBF
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RoHS 10 Compliant -
Tariff Charges
This Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
- Advanced process technology
- Low RDSON for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Repetitive avalanche capability for robustness and reliability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 20 | ||
| 105 mOhm | ||
| 55 | ||
| 1 | ||
| 3 | ||
| 175 °C | ||
| 79 | ||
| TO-252AA | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290040 |
Factory Lead Time: