IRLR3110ZTRPBF
Power MOSFET, N Channel, 100 V, 42 A, 0.011 ohm, TO-252AA, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche allowed up to Tjmax
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 63 | ||
| 14 | ||
| 100 | ||
| 2.5 | ||
| 3 | ||
| 175 °C | ||
| 140 | ||
| TO-252AA | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |