IRLMS2002TRPBF
Power MOSFET, N Channel, 20 V, 6.5 A, 0.03 ohm, SOT-23, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The IRLMS2002TRPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized lead-frame produces a HEXFET® power MOSFET. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
- Ultra-low ON-resistance
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 6.5 | ||
| 30 mOhm | ||
| 20 | ||
| 1.2 | ||
| 6 | ||
| 150 °C | ||
| 2 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |