IRLL2705TRPBF
Power MOSFET, N Channel, 55 V, 5.2 A, 40 mOhm, SOT-223, 4 Pins, Surface Mount
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RoHS 10 Compliant -
Tariff Charges
Fifth Generation HEXFET MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
- Surface Mount
- Dynamic dv/dt Rating
- Logic-Level Gate Drive
- Fast Switching
- Ease of Paralleling
- Advanced Process Technology
- Ultra Low On-Resistance
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 5.2 A | ||
| 40 mOhm | ||
| 55 V | ||
| 2 V | ||
| 4 | ||
| 150 °C | ||
| 2.1 W | ||
| HEXFET Series | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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